Filed: 1/7/2010 Granted: 11/16/2012 1044 days
Filed: 1/28/2010 Granted: 4/27/2012 820 days
Filed: 1/28/2010 Granted: 5/17/2013 1205 days
酸化物焼結体の製造方法、酸化物焼結体、スパッタリングタ-ゲット、酸化物薄膜、薄膜トランジスタの製造方法及び半導体装置
JP2010024087
Google Patents
Filed: 2/4/2010 Granted: 9/28/2012 967 days
Filed: 3/4/2010 Granted: 12/13/2013 1380 days
Filed: 3/11/2010 Granted: 7/12/2013 1219 days
Filed: 3/11/2010 Granted: 6/13/2014 1555 days
Filed: 3/25/2010 Granted: 2/20/2015 1793 days
Filed: 4/22/2010 Granted: 7/11/2014 1541 days